DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= 0.5 I

D[Cont.]

@ 25

°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25

°C

R

G

= 1.6

Ω

MIN

TYP

MAX

5100

6120

1900

2660

800

1200

200

300

40

60

92

180

16

32

40

40

50

75

20

40

UNIT

pF

nC

ns

APT10M19BVR

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN

TYP

MAX

75

300

1.3

200

1.4

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.34

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

1.0

10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.4

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic / Test Conditions

Continuous Source Current

(Body Diode)

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/

µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/

µs)

5