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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BAV19WS 데이터시트(PDF) 2 Page - Kwang Myoung I.S. CO.,LTD |
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BAV19WS 데이터시트(HTML) 2 Page - Kwang Myoung I.S. CO.,LTD |
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2 / 3 page  BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS Document number: BL/SSSDB018 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Forward Voltage VFM - 1.0 1.25 V IF=100mA IF=200mA Reverse Current BAV19WS BAV20WS BAV21WS IR - 0.1 0.1 0.1 μA VR=100V VR=150V VR=200V Capacitance between terminals CT - 5 pF VR=0,f=1.0MHz Reverse Recovery Time trr - 50 ns IF=IR=30mA, Irr=0.1×IR,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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