1A7 datasheet(1/2 Pages) GXELECTRONICS

부품명	1A7

상세설명	1.0A MINIATURE SILICON RECTIFIER

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제조업체	GXELECTRONICS [Gaomi Xinghe Electronics Co., Ltd.]

홈페이지	http://www.sddzg.com

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1A1 – 1A7

1.0A MINIATURE SILICON RECTIFIER

Features

!

Diffused Junction

!

Low Forward Voltage Drop

!

High Current Capability

A

B

A

!

High Reliability

!

High Surge Current Capability

Mechanical Data

C

!

Case: Molded Plastic

D

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 0.181 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

Maximum Ratings and Electrical Characteristics @T

A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1A1

1A2

1A3

1A4

1A5

1A6

1A7

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50

100

200

400

600

800

1000

V

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

(Note 1)

@TA = 75°C

IO

1.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

30

A

Forward Voltage

@IF = 1.0A

VFM

1.0

V

Peak Reverse Current

@TA = 25°C

At Rated DC Blocking Voltage

@TA = 100°C

IRM

5.0

50

µA

Typical Junction Capacitance (Note 2)

Cj

15

pF

Typical Thermal Resistance Junction to Ambient

(Note 1)

RJA

50

K/W

Operating Temperature Range

Tj

-65 to +125

°C

Storage Temperature Range

TSTG

-65 to +150

°C

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

R-1

Dim

Min

Max

A

20.0

—

B

2.00

3.50

C

0.53

0.64

D

2.20

2.60

All Dimensions in mm

星合电子

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　　　　　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　　ＴＥＬ：０５３６－２２１０３５９

유사한 부품 번호 - 1A7

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