APT5010LLC datasheet(1/2 Pages) ADPOW

부품명	APT5010LLC

상세설명	Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

PDF	2 Pages

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제조업체	ADPOW [Advanced Power Technology]

홈페이지	http://www.advpowertech.com

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1 / 2 page

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250µA)

On State Drain Current 2 (V

DS > ID(on) x RDS(on) Max, VGS = 10V)

Drain-Source On-State Resistance 2 (V

GS = 10V, 0.5 ID[Cont.])

Zero Gate Voltage Drain Current (V

DS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 0.8 VDSS, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Gate Threshold Voltage (V

DS = VGS, ID = 2.5mA)

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J,TSTG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current 1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

500

47

0.100

25

250

±100

35

APT5010B2LC

500

47

188

±30

±40

520

4.16

-55 to 150

300

47

50

2500

APT5010B2LC

500V 47A 0.100 W

G

D

S

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Chemin de Magret

F-33700 Merignac - France

Phone: (33) 5 5792 15 15

FAX: (33) 5 56 479761

APT Website - http://www.advancedpower.com

Power MOS VITM is a new generation of low gate charge, high voltage

N-Channel enhancement mode power MOSFETs. Lower gate charge is

achieved by optimizing the manufacturing process to minimize C

iss and Crss.

Lower gate charge coupled with Power MOS VITM optimized gate layout,

delivers exceptionally fast switching speeds.

Lower Gate Charge

Lower Input Capacitance

Faster Switching

Easier To Drive

100% Avalanche Tested Popular TMax Package

POWER MOS VITM

T-MAX™

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