V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

V

SD

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Source

Gate

Dimensions in Millimeters and (Inches)

2-Plcs.

APT5010B2VR

TC =+25°C

TJ =+150°C

SINGLE PULSE

200

100

50

10

5

1

.5

.1

20

16

12

8

4

0

OPERATION HERE

LIMITED BY RDS (ON)

10

µS

100

µS

1mS

10mS

100mS

DC

TJ =+150°C

TJ =+25°C

Crss

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

1

5

10

50 100

500

.01

.1

1

10

50

0

100

200

300

400

500

0

0.4

0.8

1.2

1.6

2.0

Coss

Ciss

30,000

10,000

5,000

1,000

500

100

200

100

50

10

5

1

VDS=250V

VDS=100V

VDS=400V

I

D

= I

D

[Cont.]