APT50M65JFLL datasheet(2/2 Pages) ADPOW

2 / 2 page

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

SOT-227 (ISOTOP®) Package Outline

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Source

Drain

Gate

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Source

Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.

ADV

ANCE

TECHNICAL

INFORMA

TION

DYNAMIC CHARACTERISTICS

APT50M65JFLL

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

4 Starting Tj = +25°C, L = 1.67mH, RG = 25

W, Peak IL = 60A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -ID [Cont.], di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -ID [Cont.], di/dt = 100A/µs)

Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

Symbol

ISM

VSD

dv/

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

µC

Amps

Symbol

Ciss

Coss

Crss

Qgs

Qgd

td(on)

t r

td(off)

t f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 0.6W

MIN

TYP

MAX

6940

1430

108

174

UNIT

MIN

TYP

MAX

240

1.3

Tj = 25°C

270

Tj = 125°C

540

Tj = 25°C

1.8

Tj = 125°C

6.2

Tj = 25°C

Tj = 125°C

THERMAL CHARACTERISTICS

Symbol

RqJC

RqJA

MIN

TYP

MAX

0.23

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

APT50M65JFLL 데이터시트(PDF) 2 Page - Advanced Power Technology

APT50M65JFLL 데이터시트(HTML) 2 Page - Advanced Power Technology

Html Pages

1 2

데이터시트 다운로드

링크 URL