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LTM4613 데이터시트(PDF) 17 Page - Linear Technology |
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LTM4613 데이터시트(HTML) 17 Page - Linear Technology |
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17 / 28 page ![]() LTM8001 17 8001f For more information www.linear.com/8001 event. The SCR latches when the input voltage threshold is exceeded, so this circuit should be used with a fuse, as shown, or employ some other method to interrupt current from the load. As mentioned, the LTM8001 sinks current by energy conversion and not dissipation. Thus, no matter what protectioncircuitthatisused,theamountofpowerthatthe protection circuit must absorb depends upon the amount of power at the input. For example, if the output voltage is 2.5V and can sink 5A, the input protection circuit should be designed to absorb at least 7.5W. In Figures 5a and 5b, let us say that the protection activation threshold is 30V. Then the circuit must be designed to be able to dissipate 7.5W and accept 7.5W/30V = 250mA. Figures 5a through 5c are crowbar circuits, which attempt to prevent the input voltage from rising above some level by clamping the input to GND through a power device. In some cases, it is possible to simply turn off the LTM8001 when the input voltage exceeds some threshold. This is possible when the voltage power source that drives current into VOUT never exceeds VIN. An example of this circuit is shown in Figure 5d. When the power source on the output drives VIN above a predetermined threshold, the comparator pulls down on the RUN pin and stops switching in the LTM8001. When this happens, the input capacitance needs to absorb the energy stored within the LTM8001’s internal inductor, resulting in an additional voltage rise. As shown in the Block Diagram, the internal APPLICATIONS INFORMATION VIN ZENER DIODE R Q 8001 F05a LTM8001 LOAD CURRENT GND VOUT0 SOURCING LOAD VIN VREF 8001 F05b Q LTM8001 LOAD CURRENT GND VOUT0 SOURCING LOAD OPTIONAL HYSTERESIS RESISTOR + – VIN ZENER DIODE SCR 8001 F05a LTM8001 LOAD CURRENT GND VOUT0 FUSE SOURCING LOAD VIN RUN 8001 F05d 10µF LTM8001 LOAD CURRENT GND VOUT0 SOURCING LOAD EXTERNAL REFERENCE VOLTAGE + – Figure 5a. The MOSFET Q Dissipates Momentary Energy to GND. The Zener Diode and Resistor Are Chosen to Ensure That the MOSFET Turns On Above the Maximum VIN Voltage Under Normal Operation Figure 5b. The Comparator in This Circuit Activates the Q MOSFET at a More Precise Voltage Than the One Shown in Figure 5a. The Reference for the Comparator is Derived from the VREF Pin of the LTM8001 Figure 5c. The SCR Latches On When the Activation Threshold is Reached, So a Fuse or Some Other Method of Disconnecting the Load Should be Used Figure 5d. This Comparator Circuit Turns Off the LTM8001 if the Input Rises Above a Predetermined Threshold. When the LTM8001 Turns Off, the Energy Stored in the Internal Inductor Will Raise VIN a Small Amount Above the Threshold. |
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