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APT8014JLL 데이터시트(PDF) 2 Page - Advanced Power Technology

부품명 APT8014JLL
상세설명  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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제조업체  ADPOW [Advanced Power Technology]
홈페이지  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT8014JLL 데이터시트(HTML) 2 Page - Advanced Power Technology

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ADV
ANCE
TECHNICAL
INFORMA
TION
DYNAMIC CHARACTERISTICS
APT8014JLL
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
MIN
TYP
MAX
0.21
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 0.6
W
MIN
TYP
MAX
7710
1480
244
284
37
161
20
19
69
15
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
Peak Diode Recovery dv/dt 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
µC
V/ns
MIN
TYP
MAX
42
168
1.3
930
29.0
10
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 3.63mH, RG = 25W, Peak IL = 42A
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5dv/
dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S £
-I
D
[Cont.]
di/
dt £ 700A/µs
V
R £
V
DSS
T
J £
150
°C
APT Reserves the right to change, without notice, the specifications and information contained herein.



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