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APT8014L2LL 데이터시트(PDF) 2 Page - Advanced Power Technology |
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APT8014L2LL 데이터시트(HTML) 2 Page - Advanced Power Technology |
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2 / 2 page ![]() DYNAMIC CHARACTERISTICS APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) Drain Source Gate Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. TO-264 MAXTM(L2) Package Outline APT8014L2LL ADVANCE TECHNICAL INFORMATION Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C V GS = 15V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C R G = 0.6 W MIN TYP MAX 7710 1480 244 284 37 161 20 19 69 15 UNIT pF nC ns Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (V GS = 0V, I S = -I D[Cont.] ) Reverse Recovery Time (I S = -I D[Cont.] , dl S /dt = 100A/µs) Reverse Recovery Charge (I S = -I D[Cont.] , dl S /dt = 100A/µs) Peak Diode Recovery dv/dt 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC V/ns MIN TYP MAX 52 208 1.3 930 29.0 10 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 temperature. 4 Starting Tj = +25°C, L = 2.37mH, RG = 25W, Peak IL = 52A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5dv/ dt numbers reflect the limitations of the test circuit rather than the device itself. I S £ -I D [Cont.] di/ dt £ 700A/µs V R £ V DSS T J £ 150 °C APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL CHARACTERISTICS Symbol RqJC RqJA MIN TYP MAX 0.14 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol I S I SM V SD t rr Q rr dv/ dt |
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