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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

Complementary TMOS

Field Effect Transistors

MiniMOS

™ devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process.

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain–to–source diode has a very low reverse recovery time.

MiniMOS devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in

portable and battery powered products such as computers,

printers, cellular and cordless phones. They can also be used for

low voltage motor controls in mass storage products such as disk

drives and tape drives. The avalanche energy is specified to

eliminate the guesswork in designs where inductive loads are

switched and offer additional safety margin against unexpected

voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends

Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• Avalanche Energy Specified

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Gate–to–Source Voltage

VGS

± 20

Vdc

Drain–to–Gate Voltage (RGS = 1.0 mΩ)

VDGR

20

Vdc

Drain Current — Continuous

N–Channel

P–Channel

— Pulsed

N–Channel

P–Channel

ID

IDM

3.8

3.3

19

20

A

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Total Power Dissipation @ TA= 25°C (2)

PD

2.0

Watts

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 20 V, VGS = 5.0 V, Peak IL = 9.0 A, L = 10 mH, RG = 25 Ω)

N–Channel

(VDD = 20 V, VGS = 5.0 V, Peak IL = 6.0 A, L = 18 mH, RG = 25 Ω)

P–Channel

EAS

405

324

mJ

Thermal Resistance — Junction to Ambient (2)

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering, 0.0625

″ from case. Time in Solder Bath is 10 seconds.

TL

260

°C

DEVICE MARKING

D2C02

(1) Negative signs for P–Channel device omitted for clarity.

(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF2C02HDR2

13

″

12 mm embossed tape

2500 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Order this document

by MMDF2C02HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

D

S

G

P–Channel

D

S

G

N–Channel

CASE 751–05, Style 14

SO–8

MMDF2C02HD

COMPLEMENTARY

DUAL TMOS POWER FET

2.0 AMPERES

20 VOLTS

RDS(on) = 0.090 OHM

(N–CHANNEL)

RDS(on) = 0.160 OHM

(P–CHANNEL)

Motorola Preferred Device

™

N–Source

1

2

3

4

8

7

6

5

Top View

N–Gate

P–Source

P–Gate

N–Drain

N–Drain

P–Drain

P–Drain

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 5