CIRCUIT TECHNOLOGY

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eroflex Circuit Technology - Advanced Multichip Modules © SCD3764 REV A 6/2/98

General Description

The

ACT-PS512K8

is

a

Plastic High Speed, 4 Megabit

(4,194,304

bits)

CMOS

Monolithic SRAM organized as

524,288

words

by

8

bits.

Designed for high-speed, high

density, high reliablility, mass

memory and fast cache system

applications.

The

plastic

monolithic

is

input

and

output

TTL

compatible. Writing is executed

when the write enable (WE)

and chip enable (CE) inputs are

low. Reading is accomplished

when WE is high and CE and

output enable (OE) are both

low. Access time grades of

10ns 12ns, 15ns, 17ns, 20ns

and 25ns are standard.

512Kx8

OE

8

WE

CE

Pin Description

Data I/O

Address Inputs

WE

Write Enable

CE

Chip Enable

OE

Output Enable

Power Supply

Ground

NC

Not Connected

V

ss

V

cc

Block Diagram – SOJ (L2)

Plastic Path™ Features

s

Low Power Monolithic CMOS 512K x 8 SRAM

s

Operating Temperature Range

q

Full Military (-55°C to +125°C)

q

Industrial (-40°C to +85°C)

s

Burn-in and Temperature Cycle Available

s

10, 12, 15, 17, 20 & 25ns Access Times

s

+5V Power Supply

s

Industry Standard Pinouts

q

Center Power / Ground Pins

s

TTL Compatible I/O

s

3.3V Device I/O Interfacing

s

JEDEC Standard 36 pin Plastic SOJ Package

q

36 Lead, .93" x .405" x 0.148 Small Outline J lead (SOJ),

Aeroflex code# "L2"

s

Fully Static Operation

q

No Clocks or Refresh Required

4 Megabit Plastic Monolithic SRAM

ACT-PS512K8 High Speed

F

I

E

I

D

C

E

R T

F

L E

X L A

ISO

9001