MMDF3N04HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

0

0.2

1.2

2

0

1

3

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.05

Figure 3. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation

with Temperature

Figure 6. Drain–to–Source Leakage Current

versus Voltage

VDS ≥ 10 V

TJ = 25°C

TJ = –55°C

25

°C

100

°C

4

2

TJ = 25°C

2

4

6

5

1

2

2.5

3

3.5

4

0.08

0

1

2

5

6

3.1 V

0.06

0.07

3

3

4

10 V

VGS = 4.5

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

– 50

0

50

100

150

0

0.5

1.0

1.5

2.0

VGS = 10 V

ID = 3.4 A

125

75

25

– 25

1

5

6

2.9 V

3.3 V

3.5 V

3.7 V

4.1 V

4.5 V

VGS =

10 V

4.3 V

1.5

4.5

0.055

0.065

0.075

1

100

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

10

0

5

10

15

30

20

25

VGS = 0 V

TJ = 125°C

100

°C

0.1

35

40

25

°C

0.4

0.5

0.6

0.3

0.1

0.2

0

2

3

4

5

8

6

7

9

10

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID = 3.4 A

TJ = 25°C

0.4

1.4

0.6

1.6

0.8

1.8

3.9 V

2.7 V

0.085

0.09

0.095

0.1