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STTH30S06 데이터시트(PDF) 4 Page - STMicroelectronics |
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STTH30S06 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STTH30S06 4/7 Doc ID 023787 Rev 1 Figure 11. Junction capacitance versus reverse voltage applied (typical values) Figure 7. Reverse recovery softness factor versus dIF/dt (typical values) Figure 8. Relative variation of dynamic parameters versus junction temperature S factor 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) VR = 400 V Tj = 125°C I F = IF(AV) Tj(°C) 0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 I F=IF(AV) V R=400 V Reference: T j=125 °C I RM S FACTOR Q RR Figure 9. Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) VFP(V) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 200 250 300 350 400 450 500 I F=IF(AV) T j=125 °C dIF/dt(A/µs) tfr(ns) 0 20 40 60 80 100 200 250 300 350 400 450 500 I F=IF(AV) V FR=2.6 V T j=125 °C dIF/dt(A/µs) C(pF) 10 100 1000 1 10 100 1000 F=1 MHz V OSC=30 mVRMS T j=25 °C VR(V) |
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