| 전자부품 데이터시트 검색엔진 |
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AS6C3216 데이터시트(PDF) 10 Page - Alliance Semiconductor Corporation |
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AS6C3216 데이터시트(HTML) 10 Page - Alliance Semiconductor Corporation |
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10 / 13 page ![]() AS6C3216 Rev. 1.0 32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM Alliance Memory, Inc. 9 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCC for Data Retention VDR CE# ≧VCC - 0.2V or CE2≦0.2V 1.2 - 3.6 V Data Retention Current IDR VCC = 1.2V CE# ≧VCC-0.2V or CE2≦0.2V other pins at 0.2V or VCC-0.2V -SL - 8 80 µA -SLI - 8 120 µA Chip Disable to Data Retention Time tCDR See Data Retention Waveforms (below) 0 - - ns Recovery Time tR tRC* - - ns tRC* = Read Cycle Time DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) Vcc CE# VDR ¡Ù 1.2V CE# ¡Ù Vcc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) Low Vcc Data Retention Waveform (2) (CE2 controlled) Vcc CE2 VDR ¡Ù 1.2V CE2 ¡Ø 0.2V Vcc(min.) VIL tR tCDR VIL Vcc(min.) Low Vcc Data Retention Waveform (3) (LB#, UB# controlled) Vcc LB#,UB# VDR ¡Ù 1.2V LB#,UB# ¡Ù Vcc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) |
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