ZPD2.7 ... ZPD75 (500 mW)

© Diotec Semiconductor AG

http://www.diotec.com/

3

0

2

3

4

5

6

7

8

10

[V]

V

Z

[mA]

50

150

0

100

I

Z

Typical breakdown characteristic

Typische Abbruchspannung

– tested with pulses

– gemessen mit Impulsen

5,6

6,2

6,8

7,5

8,2

9,1

I

Zmax

T = 25°C

j

I = 5 mA

Z

2.7

3.3 3.8

4.7

120

100

80

60

40

20

0

[%]

I

FAV

Rated forward current versus ambient temperature )

Zul. Richtstrom in Abh. von der Umgebungstemp. )

1

1

[°C]

T

A

150

100

50

0

1

10

10

10

1

3

2

[pF]

[V]

T = 25°C

f = 1.0 MHz

j

V = 1V

R

V = 2V

R

Junction capacitance vs. zener voltage (typical)

Sperrschichtkapazität in Abh. v.d. Zenerspg. (typ.)

V = 2V

R

V = 1V

R

10

100

0

10

20

30

40

50

60

70

80

V

Z

18

24

30

36

43

51

62

56

68

75

T = 25°C

j

60

50

45

40

35

30

25

20

15

5

0

[mA]

I

Z

I

Zmax

Typical breakdown characteristic

Typische Abbruchspannung

– tested with pulses

– gemessen mit Impulsen

10

10

1

10

3

-1

10

10

2

[mA]

I

F

Forward characteristics (typical values)

Durchlasskennlinien (typische Werte)

0

V

F

0.4

0.6

0.8

1.0

[V] 1.4

T = 100°C

j

T = 25°C

j