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STM32F107VB 데이터시트(PDF) 35 Page - STMicroelectronics |
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STM32F107VB 데이터시트(HTML) 35 Page - STMicroelectronics |
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35 / 103 page ![]() STM32F105xx, STM32F107xx Electrical characteristics Doc ID 15274 Rev 6 35/104 5.3 Operating conditions 5.3.1 General operating conditions Table 8. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range –65 to +150 °C TJ Maximum junction temperature 150 °C Table 9. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency 0 72 MHz fPCLK1 Internal APB1 clock frequency 0 36 fPCLK2 Internal APB2 clock frequency 0 72 VDD Standard operating voltage 2 3.6 V VDDA (1) 1. When the ADC is used, refer to Table 52: ADC characteristics. Analog operating voltage (ADC not used) Must be the same potential as VDD (2) 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation. 23.6 V Analog operating voltage (ADC used) 2.4 3.6 VBAT Backup operating voltage 1.8 3.6 V PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(3) 3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. LFBGA100 500 mW LQFP100 434 LQFP64 444 PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(4) 4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. LQFP100 434 mW LQFP64 444 TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low power dissipation(5) 5. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax. –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 °C Low power dissipation(5) –40 125 TJ Junction temperature range 6 suffix version –40 105 °C 7 suffix version –40 125 |
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