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MBR3545 데이터시트(PDF) 1 Page - Naina Semiconductor ltd.

부품명 MBR3545
상세설명  Schottky Power Diode, 35A
PDF  2 Pages
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제조업체  NAINA [Naina Semiconductor ltd.]
홈페이지  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

MBR3545 데이터시트(HTML) 1 Page - Naina Semiconductor ltd.

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Naina Semiconductor Ltd.
MBR3545 thru
MBR35100R
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
Schottky Power Diode, 35A
Features
•
Fast Switching
•
Low forward voltage drop
•
High surge capability
•
High efficiency, low power loss
•
Normal and Reverse polarity
Maximum Ratings (TJ = 25
oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
MBR3545(R)
MBR3560(R)
MBR3580(R)
MBR35100(R)
Unit
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
57
70
V
DC blocking voltage
VDC
45
60
80
100
V
Continuous forward current
TC ≤ 110
oC
IF
35
35
35
35
A
Surge non-repetitive forward
current, half-sine wave
TC = 25
oC
IFSM
600
600
600
600
A
Forward voltage
IF = 35 A
TJ = 25
oC
VF
0.68
0.75
0.84
0.84
V
Reverse current
VR = 20V,
TJ = 25
oC
IR
1.5
1.5
1.5
1.5
mA
VR = 20V,
TJ = 125
oC
25
25
25
25
Thermal & Mechanical Specifications (TJ = 25
oC, unless otherwise noted)
Parameters
Symbol
MBR3545(R)
MBR3560(R)
MBR3580(R)
MBR35100(R)
Unit
Maximum thermal resistance, junction to
case
Rth(JC)
1.5
oC/
W
Operating junction temperature range
TJ
-55 to 150
oC
Storage temperature
Tstg
-55 to 175
oC
Mounting torque (non-lubricated threads)
F
2.0
Nm
Approximate allowable weight
W
5.0
g
DO-203AA (DO-4)


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