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ACE636B 데이터시트(PDF) 2 Page - ACE Technology Co., LTD.

부품명 ACE636B
상세설명  Common Drain Dual N-Channel Enhancement Mode Field Effect
PDF  5 Pages
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제조업체  ACE [ACE Technology Co., LTD.]
홈페이지  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE636B 데이터시트(HTML) 2 Page - ACE Technology Co., LTD.

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ACE636B
Common Drain Dual N-Channel Enhancement Mode Field Effect
VER 1.2
2
Ordering information
ACE636B XX + H
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off characteristics (Note 2)
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250 uA
20
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100
uA
Zero Gate Voltage Drain
Current
IDSS
VDS=20V, VGS=0V
1
uA
On characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.6
1.2
V
Forward Transconductance
GFS
VDS=10V, ID=6A
7
13
S
Static Drain-Source
On-Resistance
RDS(ON)
VGS=4.5V, ID=6A
22
50
m
Ω
VGS=2.5V, ID=5.2A
30
65
Drain-Source Diode Characteristics And Maximum Ratings
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.5
0.77
1
V
Switching characteristics
Turn-On Delay Time
td(on)
RG=6Ω, VDD=10V, VGEN=4.5V,
ID=1A
18
nS
Turn-Off Delay Time
td(off)
25
Dynamic characteristics
Input Capacitance
Ciss
VGS=0V, VDS=8V, f=1MHz
562
pF
Output Capacitance
Coss
106
REVERSE Transfer
Capacitance
Crss
75
Total Gate Charge
QG
VDS=10V, ID=6A, VGS=4.5V
4.86
nC
Gate-Source Charge
QGS
0.92
Gate-Drain
QGD
1.4
Note: 2. Short duration test pulse used to minimize self-heating effect.
GM : SOT-23-6L
Pb - free
Halogen - free



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