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ACE1632B 데이터시트(PDF) 2 Page - ACE Technology Co., LTD.

부품명 ACE1632B
상세설명  N-Channel Enhancement Mode Field Effect Transistor
PDF  6 Pages
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제조업체  ACE [ACE Technology Co., LTD.]
홈페이지  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE1632B 데이터시트(HTML) 2 Page - ACE Technology Co., LTD.

  ACE1632B Datasheet HTML 1Page - ACE Technology Co., LTD. ACE1632B Datasheet HTML 2Page - ACE Technology Co., LTD. ACE1632B Datasheet HTML 3Page - ACE Technology Co., LTD. ACE1632B Datasheet HTML 4Page - ACE Technology Co., LTD. ACE1632B Datasheet HTML 5Page - ACE Technology Co., LTD. ACE1632B Datasheet HTML 6Page - ACE Technology Co., LTD.  
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ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
VER 1.2
2
Ordering information
ACE1632B XX + H
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250uA
60
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage Drain
Current
IDSS
VDS=60V, VGS=0V
1
uA
On characteristics
b
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
1.1
1.5
2.9
V
Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=10A
35
40
m
Ω
VGS=4.5V, ID=5A
42
50
Forward Transconductance
gfs*
VDS=15V,ID=10A
20
S
Switching characteristics
b
Total Gate Charge
Qg
VDS=48V, VGS=10V,
ID=18A
50
nC
Gate-Source Charge
Qgs
20
Gate-Drain Charge
Qgd
15
Turn-On Delay Time
td(on)
VGS=10V, VDS=30V, ID=10A,
RGEN=4.7Ω,
45
ns
Turn-On Rise Time
tr
22
Turn-Off Delay Time
td(off)
42
Turn- Off Rise Time
tf
13
Dynamic characteristics
Input Capacitance
Ciss
VDS=10V, VGS=0V
f=1MHz
1000
pF
Output Capacitance
Coss
200
Reverse Transfer
Capacitance
Crss
100
Drain-source diode characteristics and maximum ratings
b
Drain-source diode forward
voltage
VSD
VGS=0V, IS=18A
(2)
1.3
V
YM : TO-252
Pb - free
Halogen - free



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