| 전자부품 데이터시트 검색엔진 |
|
ACE4442B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
|
|
|||||||||||||||||||||||||||||
ACE4442B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
|
1 / 6 page ![]() ACE4442B N-Channel Enhancement Mode MOSFET VER 1.2 1 Description The ACE4442B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones, Pagers. Features V DS=20V I D=0.7A R DS(ON) <360 mΩ (V GS=4.5V) R DS(ON) <420 mΩ (V GS=2.5V) R DS(ON) <560 mΩ (V GS=1.8V) ESD Protected Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) TA=25℃ ID 0.7 A TA=70℃ 0.56 Drain Current (Pulsed) IDM 1 A Power Dissipation TA=25℃ PD 0.27 W TA=70℃ 0.16 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-523 |
유사한 부품 번호 - ACE4442B |
|
유사한 설명 - ACE4442B |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |