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AP60T03AS 데이터시트(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP60T03AS 데이터시트(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 4 page ![]() Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit AP60T03AS/P 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 0 3 6 9 12 0 6 12 18 24 Q G , Total Gate Charge (nC) I D =20A V DS =16V V DS =20V V DS =24V 10 100 1000 10000 1 8 15 22 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz Ciss Coss Crss 0.5 x RATED VDS TO THE OSCILLOSCOPE - + 10V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE - + D G S VDS VGS ID IG 1~ 3 mA 1 10 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC |
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