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LBAT54SWT3G 데이터시트(PDF) 1 Page - Leshan Radio Company |
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LBAT54SWT3G 데이터시트(HTML) 1 Page - Leshan Radio Company |
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1 / 3 page ![]() DEVICE MARKING LBAT54SWT1G= B8 MAXIMUM RATINGS (T J = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage V R 30 Volts Forward Power Dissipation P F @ T A = 25°C 200 mW Derate above 25°C 1.6 mW/°C Forward Current(DC) IF 200Max mA Junction Temperature T J 125Max °C Storage Temperature Range T stg –55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 µA) V(BR)R 30 — — Volts Total Capacitance (V R = 1.0 V, f = 1.0 MHz) CT — — 10 pF Reverse Leakage (V R = 25 V) IR — 0.5 2.0 µAdc Forward Voltage (I F = 0.1 mAdc) VF — 0.22 0.24 Vdc Forward Voltage (I F = 30 mAdc) VF — 0.41 0.5 Vdc Forward Voltage (I F = 100 mAdc) VF — 0.52 1.0 Vdc Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) trr — — 5.0 ns Forward Voltage (I F = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (I F = 10 mAdc) VF — 0.35 0.40 Vdc Forward Current (DC) IF — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc LBAT54SWT1G SOT–323 (SC–70) These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excel- lent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc ORDERING INFORMATION Device Marking Shipping LBAT54SWT1G B8 3000/Tape & Reel 3 CATHODE/ANODE ANODE 1 CATHODE 2 Dual Series Schottky Barrier Diodes LESHAN RADIO COMPANY, LTD. LBAT54SWT3G B8 10000/Tape & Reel We declare that the material of product compliance with RoHS requirements. 1 3 2 Rev.A 1/3 |
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