Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Drain-Source Breakdown Voltage

-40

-

-

V

Static Drain-Source On-Resistance

2

-

-

64

mΩ

-

-

95

mΩ

Gate Threshold Voltage

-1

-

-3

V

Forward Transconductance

-

4

-

S

-

-

-10

uA

-

-

-25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

8

13

nC

Gate-Source Charge

-

1.6

-

nC

Gate-Drain ("Miller") Charge

-

4.5

-

nC

Turn-on Delay Time

2

-

8

-

ns

Rise Time

-

14

-

ns

Turn-off Delay Time

-

23

-

ns

Fall Time

-8

-

ns

Input Capacitance

-

605

970

pF

Output Capacitance

-

75

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

65

-

pF

Gate Resistance

f=1.0MHz

-

5.5

8.3

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Forward On Voltage

2

-

-

-1.3

V

Reverse Recovery Time

2

-

21

-

ns

Reverse Recovery Charge

dI/dt=-100A/µs

-

16

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test.

3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

3/7

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

AP4530GH