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AM1925PE 데이터시트(PDF) 1 Page - Analog Power |
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AM1925PE 데이터시트(HTML) 1 Page - Analog Power |
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1 / 5 page ![]() Analog Power AM1925PE P-Channel 20-V (D-S) MOSFET VDS (V) ID(A) -1.2 -1.1 Symbol Limit Units VDS -20 VGS ±8 TA=25°C -1.2 TA=70°C -1 IDM -3 IS -0.43 A TA=25°C 0.34 TA=70°C 0.22 TJ, Tstg -55 to 150 °C Symbol Maximum Units 375 430 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a PRODUCT SUMMARY -20 rDS(on) (mΩ) 160 @ VGS = -4.5V 210 @ VGS = -2.5V Gate-Source Voltage Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM1925PE_1A |
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