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BLF2425M7LS140 데이터시트(PDF) 1 Page - NXP Semiconductors |
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BLF2425M7LS140 데이터시트(HTML) 1 Page - NXP Semiconductors |
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1 / 11 page ![]() 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions 1.2 Features and benefits High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) CW 2450 28 140 18.5 52 |
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