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STR-A6000M 데이터시트(PDF) 4 Page - Allegro MicroSystems |
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STR-A6000M 데이터시트(HTML) 4 Page - Allegro MicroSystems |
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4 / 13 page ![]() 4 SANKEN ELECTRIC CO., LTD. STR-A6000M-DS PWM Off-Line Switching Regulator ICs STR-A6000M Series January 8, 2013 Electrical Characteristics of MOSFET Unless otherwise specified, TA is 25°C Characteristic Symbol Test Conditions Pins Min. Typ. Max. Unit Drain-to-Source Breakdown Voltage VDSS STR-A6051M STR-A6052M STR-A6053M 8 – 1 650 – – V STR-A6079M 800 – – V Drain Leakage Current IDSS 8 – 1 – – 300 μA On-Resistance RDS(ON) STR-A6051M 8 – 1 – – 3.95 Ω STR-A6052M – – 2.8 Ω STR-A6053M – – 1.9 Ω STR-A6079M – – 19.2 Ω Switching Time tf STR-A6051M STR-A6052M STR-A6053M 8 – 1 – – 250 ns STR-A6079M – – 400 ns Thermal Resistance Rθch-C The thermal resistance between the channels of the MOSFET and the case. Case temperature, TC, is measured at the center of the case top surface. – – – 22 °C/W |
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