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MBR1035 데이터시트(PDF) 1 Page - Gaomi Xinghe Electronics Co., Ltd.

부품명 MBR1035
상세설명  Voltage Range 35 to 200 Volts Current 10.0 Amperes
PDF  2 Pages
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제조업체  GXELECTRONICS [Gaomi Xinghe Electronics Co., Ltd.]
홈페이지  http://www.sddzg.com
Logo GXELECTRONICS - Gaomi Xinghe Electronics Co., Ltd.

MBR1035 데이터시트(HTML) 1 Page - Gaomi Xinghe Electronics Co., Ltd.

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background image
35
45
50
60
90
150
200
24
31
35
42
63
105
140
35
45
50
60
90
150
200
10150
MBR1035 THRU MBR10200
Voltage Range
35 to 200 Volts
Current
10.0 Amperes
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220A molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
TO-220A
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR
1035
MBR
1045
MBR
1050
MBR
1060
MBR
1090
MBR
MBR
10200
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
V
Maximum RMS Voltage
VRMS
V
Maximum DC Blocking Voltage
VDC
V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
10
A
Peak Repetitive Forward Current (Square Wave,
20KHz) at Tc=135
oC
IFRM
20.0
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Maximum Instantaneous Forward Voltage at
(Note 2)
IF=10A, Tc=25
OC
IF=10A, Tc=125
OC
IF=20A, Tc=25
OC
IF=20A, Tc=125
OC
VF
0.70
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.85
0.71
-
-
1.05
-
-
V
Maximum Instantaneous Reverse Current
@ Tc =25
℃at Rated DC Blocking Voltage (Note 2)
@ Tc=125
℃
IR
0.1
15.0
0.1
6.0
0.009
10
mA
mA
Typical Junction Capacitance (Note 3)
Cj
350
280
200
pF
M
aximum Thermal Resistance, Junction to Case
R
θJC
3.5
2.0
℃/W
Operating Junction Temperature Range
TJ
-65 to +150
℃
Storage Temperature Range
TSTG
-65 to +175
℃
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
.412(10.5)
MAX
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
.154(3.91)
.148(3.74)
DIA
PIN1
2
.113(2.87)
.103(2.62)
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.594(15.1)
.587(14.9)
.56(14.22)
.53(13.46)
XINGHE ELECTRONICS
星合电子
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017
1


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