| 전자부품 데이터시트 검색엔진 |
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TSH253 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSH253 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page ![]() TSH253 High Sensitivity Omni-Polar Hall Effect Switch 2/8 Version: C13 C1:10nF C2:100pF R1:10KΩ Block Diagram Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100 Ω resistor in series with VDD is recommended. Typical Application Circuit Electrical Specifications (DC Operating Parameters:TA=+25 oC,V CC=5V) Parameters Test Conditions Min Typ Max Units Supply Voltage Operating 1.8 -- 6 V Supply Current Average -- 2.6 6.0 mA Output Low Voltage IOUT=0.5mA -- -- 200 mV Output Leakage Current IOFF B<BRP, VOUT = 3V -- -- 10 uA Output Rise Time RL=10k Ω, CL =20pF -- -- 0.45 uS Output Fall Time RL=10k Ω; CL =20pF -- -- 0.45 uS Electro-Static Discharge HBM 4 -- -- KV |
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