N9260 datasheet(3/10 Pages) STMICROELECTRONICS

부품명	N9260

상세설명	High voltage fast-switching PNP power transistor

PDF	10 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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3 / 10 page

STN9260

Electrical characteristics

Doc ID 18326 Rev 2

3/10

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = -600 V

-10

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = -7 V

-1

µA

VCE(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter

sustaining voltage

(IB = 0)

IC = -10 mA

-600

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -100 mA

IB = -10 mA

-1

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -100 mA

IB = -10 mA

-1

hFE

DC current gain

IC = -10 mA

VCE = -5 V

IC = -20 mA

VCE = -5 V

140

Resistive load

Rise time

Storage time

Fall time

VCC=-200 V, IC=-0.1 A

IB1=-10 mA, IB2=20 mA

Tp=30 µs

200

3.2

150

µs

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