IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,381,025

6,162,665

6,306,728 B1 6,534,343

6,683,344

one or moreof the following U.S. patents:

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,486,715

6,259,123B1 6,404,065B1 6,583,505

6,710,405B2

IXTH 75N15

IXTT 75N15

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ. Max.

g

fs

V

34

45

S

C

iss

5400

pF

C

oss

V

GS

= 0 V, V

1100

pF

C

rss

420

pF

t

d(on)

24

ns

t

r

V

33

ns

t

d(off)

R

G

= 2

Ω (External)

70

ns

t

f

17

ns

Q

g(on)

210

nC

Q

gs

V

45

nC

Q

gd

90

nC

R

thJC

0.35

K/W

R

thCK

(TO-247)

0.21

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

75

A

I

SM

Repetitive

300

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

TO-247 AD Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

TO-268 Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

Min Recommended Footprint

T

rr

I

-di/dt = 100 A/

µs

V

Q

RM

150

2.0

ns

µC