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TPS62590DRVT 데이터시트(PDF) 13 Page - Texas Instruments |
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TPS62590DRVT 데이터시트(HTML) 13 Page - Texas Instruments |
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13 / 24 page ![]() TPS62590 www.ti.com SLVS897B – JANUARY 2009 – REVISED APRIL 2011 ENABLE The device is enabled setting EN pin to high. During the start up time tStart Up the internal circuits are settled. Afterwards, the device activates the soft start circuit. The EN input can be used to control power sequencing in a system with various dc/dc converters. The EN pin can be connected to the output of another converter, to drive the EN pin high and getting a sequencing of supply rails. With EN = GND, the device enters shutdown mode. In this mode, all circuits are disabled. In fixed output voltage versions, the internal resistor divider network is disconnected from FB pin. SOFT START The TPS62590 has an internal soft start circuit that controls the ramp up of the output voltage. The output voltage ramps up from 5% to 95% of its nominal value within typical 250 μs. This limits the inrush current in the converter during ramp up and prevents possible input voltage drops when a battery or high impedance power source is used. The soft start circuit is enabled within the start up time tStart Up. SHORT-CIRCUIT PROTECTION The High-Side and Low-Side MOSFET switches are short-circuit protected with maximum switch current = ILIMF. The current in the switches is monitored by current limit comparators. Once the current in the High-Side MOSFET switch exceeds the threshold of its current limit comparator, it turns off and the Low-Side MOSFET switch is activated to ramp down the current in the inductor and High-Side MOSFET switch. The High-Side MOSFET switch can only turn on again, once the current in the Low-Side MOSFET switch has decreased below the threshold of its current limit comparator. THERMAL SHUTDOWN As soon as the junction temperature TJ exceeds 140°C (typical) the device goes into thermal shutdown. In this mode, the High-Side and Low-Side MOSFETs are turned-off. The device continues its operation when the junction temperature falls below the thermal shutdown hysteresis. Copyright © 2009–2011, Texas Instruments Incorporated 13 |
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