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CY62156ESL 데이터시트(PDF) 9 Page - Cypress Semiconductor

부품명 CY62156ESL
상세설명  8-Mbit (512 K x 16) Static RAM
PDF  16 Pages
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제조업체  CYPRESS [Cypress Semiconductor]
홈페이지  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62156ESL 데이터시트(HTML) 9 Page - Cypress Semiconductor

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CY62156ESL MoBL®
Document Number: 001-54995 Rev. *D
Page 9 of 16
Figure 6. Write Cycle No 1: WE Controlled [20, 21, 22]
Figure 7. Write Cycle 2: CE Controlled [20, 21, 22]
Switching Waveforms (continued)
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
VALID DATA
tBW
NOTE 23
CE1
ADDRESS
CE2
WE
DATA I/O
OE
BHE/BLE
tHD
tSD
tPWE
tHA
tAW
tSCE
tWC
tHZOE
VALID DATA
tBW
tSA
NOTE 23
CE1
ADDRESS
CE2
WE
DATA I/O
OE
BHE/BLE
Notes
20. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write
and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the
write.
21. Data I/O is high impedance if OE = VIH.
22. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
23. During this period, the I/Os are in output state. Do not apply input signals.



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