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CY62156ESL 데이터시트(PDF) 9 Page - Cypress Semiconductor |
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CY62156ESL 데이터시트(HTML) 9 Page - Cypress Semiconductor |
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9 / 16 page ![]() CY62156ESL MoBL® Document Number: 001-54995 Rev. *D Page 9 of 16 Figure 6. Write Cycle No 1: WE Controlled [20, 21, 22] Figure 7. Write Cycle 2: CE Controlled [20, 21, 22] Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tSCE tWC tHZOE VALID DATA tBW NOTE 23 CE1 ADDRESS CE2 WE DATA I/O OE BHE/BLE tHD tSD tPWE tHA tAW tSCE tWC tHZOE VALID DATA tBW tSA NOTE 23 CE1 ADDRESS CE2 WE DATA I/O OE BHE/BLE Notes 20. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 21. Data I/O is high impedance if OE = VIH. 22. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 23. During this period, the I/Os are in output state. Do not apply input signals. |
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