LP324MX datasheet(2/18 Pages) TI1

2 / 18 page

LP2902-N, LP324-N

SNOSBX6C – SEPTEMBER 1999 – REVISED MARCH 2013

www.ti.com

Simplified Schematic

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

LP324-N

32V or ± 16V

LP2902-N

26V or ± 13V

Differential Input Voltage

LP324-N

32V

LP2902-N

26V

Input Voltage(3)

LP324-N

−0.3V to 32V

LP2902-N

−0.3V to 26V

Output Short-Circuit to GND (One Amplifier)(4)

Continuous

V+

≤ 15V and TA = 25°C

ESD Susceptibility(5)

±500V

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

The input voltage is not allowed to go more than

−0.3V below V− (GND) as this will turn on a parasitic transistor causing large currents

to flow through the device.

(4)

Short circuits from the output to GND can cause excessive heating and eventual destruction. The maximum sourcing output current is

approximately 30 mA independent of the magnitude of V+. At values of supply voltage in excess of 15 VDC, continuous short-circuit to

GND can exceed the power dissipation ratings (particularly at elevated temperatures) and cause eventual destruction. Destructive

dissipation can result from simultaneous shorts on all amplifiers.

(5)

The test circuit used consists of the human body model of 100 pF in series with 1500

Ω.

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