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STM32F372RC 데이터시트(PDF) 57 Page - STMicroelectronics

부품명 STM32F372RC
상세설명  ARM Cortex-M4F 32b MCUFPU, up to 256KB Flash32KB SRAM timers
PDF  128 Pages
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STM32F372RC 데이터시트(HTML) 57 Page - STMicroelectronics

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STM32F37x
Electrical characteristics
Doc ID 022691 Rev 3
57/128
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 24 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 22.
Table 24.
Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPOR/PDR
(1)
1.
The PDR detector monitors VDD, VDDA and VDDSD12 (if kept enabled in the option bytes). The POR
detector monitors only VDD.
Power on/power down reset
threshold
Falling edge
1.8(2)
2.
The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
1.88
1.96
V
Rising edge
1.84
1.92
2.0
V
VPDRhyst
(3)
PDR hysteresis
40
mV
tRSTTEMPO
(3)
3.
Guaranteed by design, not tested in production.
POR reset temporization
1.5
2.5
4.5
ms
Table 25.
Programmable voltage detector characteristics
Symbol
Parameter
Conditions
Min(1)
1.
Data based on characterization results only, not tested in production.
Typ
Max(1)
Unit
VPVD0
PVD threshold 0
Rising edge
2.1
2.18
2.26
V
Falling edge
2
2.08
2.16
V
VPVD1
PVD threshold 1
Rising edge
2.19
2.28
2.37
V
Falling edge
2.09
2.18
2.27
V
VPVD2
PVD threshold 2
Rising edge
2.28
2.38
2.48
V
Falling edge
2.18
2.28
2.38
V
VPVD3
PVD threshold 3
Rising edge
2.38
2.48
2.58
V
Falling edge
2.28
2.38
2.48
V
VPVD4
PVD threshold 4
Rising edge
2.47
2.58
2.69
V
Falling edge
2.37
2.48
2.59
V
VPVD5
PVD threshold 5
Rising edge
2.57
2.68
2.79
V
Falling edge
2.47
2.58
2.69
V
VPVD6
PVD threshold 6
Rising edge
2.66
2.78
2.9
V
Falling edge
2.56
2.68
2.8
V
VPVD7
PVD threshold 7
Rising edge
2.76
2.88
3
V
Falling edge
2.66
2.78
2.9
V
VPVDhyst
(2)
2.
Guaranteed by design, not tested in production.
PVD hysteresis
100
mV
IDD(PVD)(2)
PVD current
consumption
0.15
0.26
µA



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