STM32F373C8 datasheet(77/128 Pages) STMICROELECTRONICS

77 / 128 page

STM32F37x

Electrical characteristics

Doc ID 022691 Rev 3

77/128

6.3.10

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

Guaranteed by design, not tested in production.

Table 45.

Flash memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time

TA–40 to +105 °C

53.5

µs

tERASE Page (2 kB) erase time

TA –40 to +105 °C

tME

Mass erase time

TA –40 to +105 °C

IDD

Supply current

Write mode

Erase mode

Table 46.

Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Data based on characterization results, not tested in production.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

STM32F373C8 데이터시트(PDF) 77 Page - STMicroelectronics

STM32F373C8 데이터시트(HTML) 77 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL