T830-8FP datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

T830-8FP

2/9

Doc ID 023366 Rev 1

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(rms)

On-state rms current (full sine wave)

Tc = 95 °C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25 °C)

F = 50 Hz

t = 20 ms

F = 60 Hz

t = 16.7 ms

I²tI²t Value for fusing

tp = 10 ms

A²s

dI/dt

Critical rate of rise of on-state

current IG = 2 x IGT, tr  100 ns

F = 120 Hz

Tj = 125 °C

100

A/µs

VDSM,

VRSM

Non repetitive surge peak on-state

voltage

tp = 10 ms

Tj = 25 °C

900

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Lead temperature for soldering during 10 s

(at 4 mm from case)

260

°C

Vins

Insulation rms voltage, 1 minute

1500

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

Minimum IGT is guaranteed at 5% of IGT max.

VD = 12 V, RL = 30 

I - II - III

Max.

VGT

1.3

VGD

VD = VDRM, RL = 3.3 kTj = 125 °C

I - II - III

Min.

0.2

(2)

For both polarities of A2 referenced to A1.

IT = 250 mA

Max.

IG = 1.2 IGT

I - II - III

Max.

dV/dt

VD = 67%VDRM, gate open

Tj = 125 °C

Min.

2500

V/µs

(dI/dt)c

Without snubber

Tj = 125 °C

Min.

10.0

A/ms

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