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RN1102MFVTPL3 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 RN1102MFVTPL3
상세설명  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
PDF  8 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1102MFVTPL3 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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RN1101MFV
∼RN1106MFV
2010-03-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50 V, IE = 0
―
―
100
Collector cutoff current
RN1101MFV to
1106MFV
ICEO
―
VCE = 50 V, IB = 0
―
―
500
nA
RN1101MFV
0.82
―
1.52
RN1102MFV
0.38
―
0.71
RN1103MFV
0.17
―
0.33
RN1104MFV
VEB = 10 V, IC = 0
0.082
―
0.15
RN1105MFV
0.078
―
0.145
Emitter cutoff current
RN1106MFV
IEBO
―
VEB = 5 V, IC = 0
0.074
―
0.138
mA
RN1101MFV
30
―
―
RN1102MFV
50
―
―
RN1103MFV
70
―
―
RN1104MFV
80
―
―
RN1105MFV
80
―
―
DC current gain
RN1106MFV
hFE
―
VCE = 5 V, IC = 10 mA
80
―
―
Collector-emitter
saturation voltage
RN1101MFV to
1106MFV
VCE (sat)
―
IC = 5 mA, IB = 0.5 mA
―
0.1
0.3
V
RN1101MFV
1.1
―
2.0
RN1102MFV
1.2
―
2.4
RN1103MFV
1.3
―
3.0
RN1104MFV
1.5
―
5.0
RN1105MFV
0.6
―
1.1
Input voltage (ON)
RN1106MFV
VI (ON)
―
VCE = 0.2 V, IC = 5
mA
0.7
―
1.3
V
RN1101MFV to
1104MFV
1.0
―
1.5
Input voltage (OFF)
RN1105MFV,
1106MFV
VI (OFF)
―
VCE = 5 V, IC = 0.1
mA
0.5
―
0.8
V
Collector output
capacitance
RN1101MFV to
1106MFV
Cob
―
VCB = 10 V, IE = 0,
f = 1 MHz
―
0.7
―
pF
RN1101MFV
3.29
4.7
6.11
RN1102MFV
7
10
13
RN1103MFV
15.4
22
28.6
RN1104MFV
32.9
47
61.1
RN1105MFV
1.54
2.2
2.86
Input resistor
RN1106MFV
R1
―
―
3.29
4.7
6.11
kΩ
RN1101MFV to
1104MFV
0.8
1.0
1.2
RN1105MFV
0.0376 0.0468 0.0562
Resistor ratio
RN1106MFV
R1/R2
―
―
0.08
0.1
0.12



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