4

3

2

1

Top View

4

3

2

1

Bottom View

A

B

C

D

A

B

C

D

ACB

ACB

FB

PVIN

PVIN

SW

SW

PGND

SGND

BGND

PACB

VIO

SDATA

SCLK

GPO1

SVDD

PVIN

PVIN

VIO

SCLK

SW

SW

SDATA

GPO1

FB

PGND

SGND

BGND

ACB

ACB

PACB

SVDD

1.8V

RFFE

Master

LM3263

VIO

BGND

PGND

1.5 µH

10 µF

4.7 µF

3 x 1.0 µF

VBATT

2.7V to 5.5V

10 µF

FB

ACB

SW

PACB

SVDD

3.3 nF

PVIN

0.1 µF

PA(s)

PA

2G

3G/4G

Output Voltage

0.4V to 3.6V

SCLK

SDATA

GPO1

SGND

LM3263

SNVS837 – JUNE 2013

www.ti.com

TYPICAL APPLICATION CIRCUIT

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

CONNECTION DIAGRAMS

2

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