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91034 데이터시트(PDF) 4 Page - Vishay Siliconix

부품명 91034
상세설명  Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedlzed device design, low on-resistance and cost-effectiveness
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

91034 데이터시트(HTML) 4 Page - Vishay Siliconix

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Document Number: 91034
4
S11-0509-B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF634, SiHF634
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1750
1400
1050
700
0
350
100
101
VDS, Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS = 0 V, f = 1 MHz
C
iss = Cgs + Cgd, Cds Shorted
C
rss = Cgd
C
oss = Cds + Cgd
91034_05
QG, Total Gate Charge (nC)
20
16
12
8
0
4
0
10
50
40
30
20
V
DS = 50 V
V
DS = 125 V
For test circuit
see figure 13
V
DS = 200 V
91034_06
I
D = 5.6 A
101
100
VSD, Source-to-Drain Voltage (V)
0.4
1.2
1.0
0.8
0.6
25
°C
150
°C
V
GS = 0 V
91034_07
10-1
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
VDS, Drain-to-Source Voltage (V)
T
C = 25 °C
T
J = 150 °C
Single Pulse
102
2
5
0.1
2
5
1
2
5
10
2
5
25
110
25
102
103
25
91034_08
103



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