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STM8S003F3U6TR 데이터시트(PDF) 83 Page - STMicroelectronics |
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STM8S003F3U6TR 데이터시트(HTML) 83 Page - STMicroelectronics |
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83 / 100 page ![]() Unit Max (1) Typ Conditions Parameter Symbol 3 1.5 fADC = 4 MHz 3 1.8 fADC = 6 MHz 3 1.5 fADC = 2 MHz Gain error (2) |EG| 3 2.1 fADC = 4 MHz 4 2.2 fADC = 6 MHz 1.5 0.7 fADC = 2 MHz Differential linearity error (2) |ED| 1.5 0.7 fADC = 4 MHz 1.5 0.7 fADC = 6 MHz 1.5 0.6 fADC = 2 MHz Integral linearity error (2) |EL| 2 0.8 fADC = 4 MHz 2 0.8 fADC = 6 MHz (1) Data based on characterization results, not tested in production. (2) ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in the I/O port pin characteristics section does not affect the ADC accuracy. Table 46: ADC accuracy with RAIN < 10 kΩ RAIN, VDD = 3.3 V Unit Max (1) Typ Conditions Parameter Symbol LSB 3.5 1.6 fADC = 2 MHz Total unadjusted error (2) |ET| 4 1.9 fADC = 4 MHz 2.5 1 fADC = 2 MHz Offset error (2) |EO| 83/100 DocID018576 Rev 3 Electrical characteristics STM8S003K3 STM8S003F3 |
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