FZT651TC datasheet(4/7 Pages) DIODES

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FZT651

Document Number DS33149 Rev. 4 - 2

4 of 7

www.diodes.com

October 2012

A Product Line of

Diodes Incorporated

FZT651

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

−

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

−

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

−

IE = 100µA

Collector Cut-off Current

ICBO

−

0.1

µA

VCB = 60V

−

VCB = 60V, TA = 125°C

Emitter Cut-off Current

IEBO

−

100

VEB = 4V

Collector-Emitter Saturation Voltage (Note 10)

VCE(sat)

−

0.12

0.3

IC = 1A, IB = 100mA

−

0.43

0.6

IC = 3A, IB = 300mA

Base-Emitter Saturation Voltage (Note 10)

VBE(sat)

−

0.9

1.25

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage (Note 10)

VBE(on)

−

0.8

1.0

IC = 1A, VCE = 2V

DC Current Gain (Note 10)

hFE

200

−

IC = 50mA, VCE = 2V

100

200

300

IC = 500mA, VCE = 2V

170

−

IC = 1A, VCE = 2V

−

IC = 2A, VCE = 2V

Current Gain-Bandwidth Product (Note 10)

140

175

−

MHz

VCE = 5V, IC = 100mA,

f = 100MHz

Switching Times

ton

−

IC = 500mA, VCC = 10V,

IB1 = IB2 = 50mA

toff

−

800

Output Capacitance (Note 10)

Cobo

−

VCB = 10V, f = 1MHz

Notes:

10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

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