T1210-800G datasheet(2/12 Pages) STMICROELECTRONICS

2 / 12 page

Characteristics

BTA12, BTB12, T12xx

2/12

Characteristics

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current

(full sine wave)

I2PAK / D2PAK /

TO-220AB

Tc = 105° C

TO-220AB Ins.

Tc = 90° C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25° C)

F = 50 Hz

t = 20 ms

120

F = 60 Hz

t = 16.7 ms

126

I2tI2t Value for fusing

tp = 10 ms

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 125° C

A/µs

VDSM/VRSM

Non repetitive surge peak off-state

voltage

tp = 10 ms

Tj = 25° C

VDRM/VRRM

+ 100

IGM

Peak gate current

tp = 20 µs

Tj = 125° C

PG(AV)

Average gate power dissipation

Tj = 125° C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3.

Electrical characteristics (Tj = 25°C, unless otherwise specified)

Snubberless and logic level (3 quadrants)

Symbol

Test conditions

Quadrant

T12xx

BTA12 / BTB12

Unit

T1210

T1235

T1250

IGT

(1)

Minimum IGT is guaranted at 5% of IGT max

VD = 12 V

RL = 30 Ω

I - II - III

MAX.

VGT

I - II - III

MAX.

1.3

VGD

VD = VDRM

RL = 3.3 kΩ

Tj = 125° C

I - II - III

MIN.

0.2

(2)

for both polarities of A2 referenced to A1

IT = 100 mA

MAX.

IG = 1.2 IGT

I - III

MAX.

dV/dt (2)

VD = 67 %VDRM gate open

Tj = 125° C

MIN.

500

1000

500

1000

V/µs

(dI/dt)c (2)

(dV/dt)c = 0.1 V/µs

Tj = 125° C

MIN.

6.5

3.5

6.5

A/ms

(dV/dt)c = 10 V/µs

Tj = 125° C

2.9

Without snubber

Tj= 125° C

6.5

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