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BAS321 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BAS321 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 9 page ![]() 2004 Jan 26 2 NXP Semiconductors Product data sheet General purpose diode BAS321 FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose switching in e.g. surface mounted circuits. DESCRIPTION The BAS321 is a general purpose diode fabricated in planar technology and encapsulated in a plastic SOD323 package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD323) and symbol. Marking code: A7 The marking bar indicates the cathode. handbook, halfpage 12 MAM406 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed circuit-board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS321 − plastic surface mounted package; 2 leads SOD323 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 250 V VR continuous reverse voltage − 200 V IF continuous forward current see Fig.2; note 1 − 250 mA IFRM repetitive peak forward current tp < 0.5 ms; δ ≤ 0.25 − 625 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 9 A t = 100 µs − 3 A t = 10 ms − 1.7 A Ptot total power dissipation Tamb = 25 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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