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BAT54SW 데이터시트(PDF) 5 Page - NXP Semiconductors |
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BAT54SW 데이터시트(HTML) 5 Page - NXP Semiconductors |
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5 / 11 page ![]() BAT54W_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 — 20 November 2012 5 of 11 NXP Semiconductors BAT54W series Schottky barrier diodes 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. f=1MHz; Tamb =25 C Fig 3. Diode capacitance as a function of reverse voltage; typical values 006aac891 VR (V) 030 20 10 4 6 2 8 10 Cd (pF) 0 (1) IR =1mA Fig 4. Reverse recovery time test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 |
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