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FMMT717 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 FMMT717
상세설명  SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS
PDF  4 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT717 데이터시트(HTML) 2 Page - Diodes Incorporated

  FMMT717 Datasheet HTML 1Page - Diodes Incorporated FMMT717 Datasheet HTML 2Page - Diodes Incorporated FMMT717 Datasheet HTML 3Page - Diodes Incorporated FMMT717 Datasheet HTML 4Page - Diodes Incorporated  
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0.0
0.2
0.4
0.6
0.8
1.0
Collector Current
I+/I*=10
Collector Current
10A
Collector Current
Collector Current
0.0
I+/I*=20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V+-=2V
0
450
225
V+-=2V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST Tamb = 25 deg C
VCE (VOLTS)
TYPICAL CHARACTERISTICS
-55°C
100°C
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
25°C
100°C
-55°C
D.C.
1s
100ms
10ms
1ms
100µs
0.1
10A
1mA
10A
1mA
1mA
10A
1mA
Safe Operating Area
0.6
0.2
0.4
1.4
1.6
10m
1
1m
10m
VCE(SAT) v IC
IC - Collector Current (A)
100m
10
1
I+/I*=10
I+/I*=20
I+/I*=50
+25°C
100m
VCE(SAT) vs IC
10mA
100mA
1A
VBE(SAT) vs IC
10mA
100mA
1A
hFE vs IC
10mA
100mA
1A
VBE(ON) vs IC
10mA
100mA
1A
1.0
10
100
FMMT720
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT722
FMMT723
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-70
-150
-100
-200
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-70
-125
-100
-160
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-8.8
-5
-8.8
V
IE=-100µA
Collector Cut-Off
Current
ICBO
-100
-100
nA
nA
VCB=-60V
VCB=-80V
Emitter Cut-Off
Current
IEBO
-100
-100
nA
VEB=-4V
Collector Emitter
Cut-Off Current
ICES
-100
-100
nA
nA
VCES=-60V
VCES=-80V
Collector-Emitter
Saturation Voltage
VCE(sat)
-35
-135
-140
-175
-50
-200
-220
-260
-50
-125
-210
-80
-200
-330
mV
mV
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-0.5A, IB=-20mA*
IC=-0.5A, IB=-50mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-150mA*
IC=-1.5A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.94 -1.05
-0.89 -1.0
V
IC=-1A, IB=-150mA*
IC=-1.5A, IB=-200mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.78 -1.0
-0.71 -1.0
V
IC=-1A, VCE=-10V*
IC=-1.5A, VCE=-5V*
Static Forward
Current Transfer
Ratio
hFE
300
300
175
40
470
450
275
60
10
300
300
250
475
450
375
250
30
IC=-10mA, VCE=-5V*
IC=-10mA, VCE=-10V*
IC=-0.1A, VCE=-5V*
IC=-0.1A, VCE=-10V*
IC=-0.5A, VCE=-10V*
IC=-1A, VCE=-5V*
IC=-1A, VCE=-10V*
IC=-1.5A, VCE=-5V*
IC=-1.5A, VCE=-10V*
IC=-3A, VCE=-5V*
Transition
Frequency
fT
150
200
150
200
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance Cobo
14
20
13
20
pF
VCB=-10V, f=1MHz
Turn-On Time
t(on)
40
50
ns
VCC=-50V, IC=-0.5A
IB1=IB2=-50mA
Turn-Off Time
t(off)
700
760
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT722
FMMT723
3 - 164
3 - 165



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