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STM32L152C6 데이터시트(PDF) 71 Page - STMicroelectronics |
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STM32L152C6 데이터시트(HTML) 71 Page - STMicroelectronics |
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71 / 121 page ![]() STM32L151x6/8/B, STM32L152x6/8/B Electrical characteristics Doc ID 17659 Rev 8 71/121 6.3.6 Internal clock source characteristics The parameters given in Table 30 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 14. High-speed internal (HSI) RC oscillator Low-speed internal (LSI) RC oscillator Table 30. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency VDD = 3.0 V 16 MHz TRIM (1)(2) 1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0). HSI user-trimmed resolution Trimming code is not a multiple of 16 ± 0.4 0.7 % Trimming code is a multiple of 16 ± 1.5 % ACCHSI (2) 2. Based on characterization, not tested in production. Accuracy of the factory-calibrated HSI oscillator VDDA = 3.0 V, TA = 25 °C -1(3) 3. Tested in production. 1(3) % VDDA = 3.0 V, TA = 0 to 55 °C -1.5 1.5 % VDDA = 3.0 V, TA = -10 to 70 °C -2 2 % VDDA = 3.0 V, TA = -10 to 85 °C -2.5 2 % VDDA = 3.0 V, TA = -10 to 105 °C -4 2 % VDDA = 1.65 V to 3.6 V TA = -40 to 105 °C -4 3 % tSU(HSI) (2) HSI oscillator startup time 3.7 6 µs IDD(HSI) (2) HSI oscillator power consumption 100 140 µA Table 31. LSI oscillator characteristics Symbol Parameter Min Typ Max Unit fLSI (1) 1. Tested in production. LSI frequency 26 38 56 kHz DLSI (2) 2. This is a deviation for an individual part, once the initial frequency has been measured. LSI oscillator frequency drift 0°C ≤ TA ≤ 85°C -10 4 % tsu(LSI) (3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time 200 µs IDD(LSI) (3) LSI oscillator power consumption 400 510 nA |
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