STP11N52K3 datasheet(3/20 Pages) STMICROELECTRONICS

3 / 20 page

STB11N52K3, STF11N52K3, STP11N52K3

Electrical ratings

Doc ID 018868 Rev 2

3/20

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, D²PAK

TO-220FP

VDS

Drain- source voltage

525

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

10 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

6 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

40 (1)

PTOT

Total dissipation at TC = 25 °C

125

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

170

VESD(G-S)

Gate source ESD(HBM-C = 100 pF,

R = 1.5 k

Ω)

2500

dv/dt(3)

ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

D²PAK

Rthj-case Thermal resistance junction-case max

4.17

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.50

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

Maximum lead temperature for soldering

purpose

300

°C/W

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