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STU150N3LLH6 데이터시트(PDF) 1 Page - STMicroelectronics |
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STU150N3LLH6 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() September 2009 Doc ID 15227 Rev 3 1/16 16 STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 Ω 80 A STP150N3LLH6 30 V 0.0033 Ω 80 A STu150N3LLH6 30 V 0.0033 Ω 80 A DPAK 1 3 3 2 1 IPAK TO-220 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STD150N3LLH6 150N3LLH6 DPAK Tape and reel STP150N3LLH6 150N3LLH6 TO-220 Tube STU150N3LLH6 150N3LLH6 IPAK Tube www.st.com |
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