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STM8AF5169 데이터시트(PDF) 85 Page - STMicroelectronics

부품명 STM8AF5169
상세설명  Automotive 8-bit MCU, with up to 128 Kbytes Flash, data EEPROM
PDF  110 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM8AF5169 데이터시트(HTML) 85 Page - STMicroelectronics

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STM8AF52/62xx, STM8AF51/61xx
Electrical characteristics
Doc ID 14395 Rev 9
85/110
Electromagnetic interference (EMI)
Emission tests conform to the SAE J 1752/3 standard for test software, board layout and pin
loading.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 48.
EMI data
Symbol
Parameter
Conditions
Unit
General
conditions
Monitored
frequency band
Max fCPU
(1)
1.
Data based on characterization results, not tested in production.
8
MHz
16
MHz
24
MHz
SEMI
Peak level
VDD = 5 V,
TA = 25 °C,
LQFP80 package
conforming to SAE
J 1752/3
0.1 MHz to 30 MHz
15
17
22
dBµV
30 MHz to 130 MHz
18
22
16
130 MHz to 1 GHz
-1
3
5
SAE EMI level
2
2.5
2.5
Table 49.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1.
Data based on characterization results, not tested in production
Uni
t
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = 25 °C, conforming to
JESD22-A114
3A
4000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA = 25 °C, conforming to
JESD22-C101
3
500
VESD(MM)
Electrostatic discharge voltage
(charge device model)
TA = 25 °C, conforming to
JESD22-A115
B
200



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