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SO16N 데이터시트(PDF) 19 Page - STMicroelectronics |
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SO16N 데이터시트(HTML) 19 Page - STMicroelectronics |
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19 / 51 page ![]() L6566BH Application information Doc ID 16610 Rev 2 19/51 Figure 7. Timing diagram showing short-circuit behavior (SS pin clamped at 5 V) Figure 8. VHV rating vs. temperature 5.2 Zero-current detection and triggering block; oscillator block The zero-current detection (ZCD) and triggering blocks switch on the external MOSFET if a negative-going edge falling below 50 mV is applied to the input (pin 11, ZCD). To do so, the triggering block must be previously armed by a positive-going edge exceeding 100 mV. This feature is typically used to detect transformer demagnetization for QR operation, where the signal for the ZCD input is obtained from the transformer’s auxiliary winding used also to supply the L6566BH. The triggering block is blanked for TBLANK = 2.5 µs after MOSFET AM11483v1 Vcc (pin 5) GD (pin 4) Vcc_OK VccON VccOFF Vccrestart Icharge 0.85 mA Short circuit occurs here t t t Trep < 0.03Trep AM11484v1 0.900 0.920 0.940 0.960 0.980 1.000 1.020 1.040 1.060 1.080 -50 -25 0 25 50 75 100 125 150 Tj ( C) |
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